沟道耐压效应MOSFET¥0.21去看看汇信半导体发布了PMV56XN-VB SOT-23(TO-236) 场效应管(MOSFET) N沟道,耐压:20V沟道耐压电流效应¥0.30去看看芯起航三发布了PMV56XN-VB 场效应管(MOSFET) 1个N沟道,耐压:20V,电流:6A SOT晶体管效应100V263¥30去看看燮宏微电子 只做原装发布了SUM40N10-30-GE3-VB TO-263 N 100V 56A 场效应管晶体管晶体管效应100V263¥30去看看燮宏微电子 场效应管营业部发布了SUM40N10-30-GE3-VB TO-263 N 100V 56A 场效应管晶体管21256LGHK1608ECJ¥30去看看宇豪正品原装店发布了贴插LGHK21256N8K-ECJ1VB1A154K-C1608CB-56NJ-B沟道晶体FQD252¥3.80去看看睿捷芯品发布了FQD50N06-VB TO-252 场效电晶体 1个N沟道 60V 56A沟道晶体FQD252¥3.80去看看原装进口芯片发布了FQD50N06-VB TO-252 场效电晶体 1个N沟道 60V 56A沟道电流电压效应¥5.30去看看易贝半导体发布了SQJ140EP-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;电流沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN2R5-40YLDX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R5-40YSD/2X-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SQJ136ELP-T1_GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMNR90-40YLH-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NVMYS1D2N04CLTWG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NVMYS1D6N04CLTWG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电流电压效应¥5.30去看看易贝半导体发布了SQJA76EP-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;电流沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMNR90-40YSNX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NTMYS2D9N04CLTWG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN2R0-40YLD-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R5-40YSD-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NTMYS1D3N04CTWG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SQJA76EP-T1_GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R9-40YSBX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK7Y1R4-40H-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R7-40YLB-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R4-40YSHX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK7J1R4-40H-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMNR70-40YSN-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN2R0-40YLBX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NVMYS1D6N04CLT1G-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电流电压效应¥5.30去看看易贝半导体发布了SiJA54ADP-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;电流沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R4-40YLDX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R5-40YSDX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN2R5-40YLD/2X-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R6-40YLC,115-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:4沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NVMYS2D9N04CLTWG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SQJ138EP-T1_GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SIJA52DP-T1-GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK7J1R0-40H-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK9Y1R3-40H-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK9Y1R6-40H-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电流电压效应¥5.30去看看易贝半导体发布了SiJA54DP-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;电流沟道电流电压效应¥5.30去看看易贝半导体发布了SQJ136ELP-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;电流沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R0-40YLD/2X-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SIJA52ADP-T1-GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK9Y1R9-40H-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R5-50YLH-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电流电压效应¥5.30去看看易贝半导体发布了SQJ138EP-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;电流沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN2R2-40YSDX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN2R2-40YSBX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了BUK9Y1R3-40HX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SIJA54DP-T1-GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R5-50YLHX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R0-40YSH-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了NTMYS2D4N04CTWG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R7-40YLDX-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SQJ140ELP-T1_GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SIJ438DP-T1-GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了SIJ450DP-T1-GE3-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了PSMN1R4-40YLD-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;沟道电压效应LFPAK56¥5.30去看看易贝半导体发布了STK224N4F7AG-VB 场效应管(MOSFET) LFPAK56 N沟道;电压:40V;